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mmrf2010n MMRF2010GN 1 rf device data nxp semiconductors rf ldmos wideband integrated power amplifiers the mmrf2010n is a 2--stage rfic designed for iff transponder applications operating from 1030 to 1090 mhz. these devices are suitable for use in pulse applications such as iff and secondary radar transponders. typical wideband performance: (52 vdc, t a =25 c) frequency (mhz) (1) signal type p out (w) g ps (db) 2nd stage eff. (%) 1030 pulse (128 sec, 10% duty cycle) 250 peak 34.1 61.0 1090 33.4 61.9 1030 pulse (2 msec, 20% duty cycle) 250 peak 33.6 61.5 1090 32.6 62.9 narrowband performance: (50 vdc, t a =25 c) frequency (mhz) signal type p out (w) g ps (db) 2nd stage eff. (%) 1090 (2) pulse (128 sec, 10% duty cycle) 250 peak 32.1 61.4 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 1090 (1) pulse (2 msec, 20% duty cycle) > 20:1 at all phase angles 0.316 w peak (3 db overdrive) 52 no device degradation 1. measured in 1030?1090 mhz reference circuit. 2. measured in 1090 mhz narrowband test circuit. features ? characterized over 1030?1090 mhz ? on--chip input (50 ohm) and interstage matching ? single ended ? integrated esd protection ? low thermal resistance ? integrated quiescent current te mperature compensation with enable/disable function (3) typical applications ? driver pa for high power pulse applications ? iff and secondary radar 3. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987, quiescent current control for the rf integrated circuit device family. go to http://www.nxp.com/rf and search for an1977 or an1987. document number: mmrf2010n rev. 1, 04/2017 nxp semiconductors technical data 1030?1090 mhz, 250 w peak, 50 v rf ldmos integrated power amplifiers mmrf2010n MMRF2010GN to--270wb--14 plastic mmrf2010n to--270wbg--14 plastic MMRF2010GN ? 2015, 2017 nxp b.v.
2 rf device data nxp semiconductors mmrf2010n MMRF2010GN figure 1. functional block diagram figure 2. pin connections (top view) quiescent current temperature compensation (1) and thermal sense v ds1 rf in v gs1 rf out /v ds2 v gs2 note: exposed backside of the package is the source terminal for the transistor. v ds1 n.c. rf in n.c. rf out /v ds2 1 2 3 4 7 8 14 n.c. 9 10 11 v gs2 v gs1 rf in rf in thermal sense rf in rf out sense rf out /v ds2 13 6 12 5 thermal sense rf out sense stage 1 stage 2 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +100 vdc gate--source voltage v gs ?6, +10 vdc operating voltage v dd 50, +0 vdc storage temperature range t stg ?65 to +150 c case operating temperature range t c ?55 to 150 c operating junction temperature range (2,3) t j ?55 to 225 c input power p in 25 dbm table 2. thermal characteristics characteristic symbol value (3,4) unit thermal impedance, junction to case pulse: case temperature 81 c, 250 w peak, 128 sec pulse width, 10% duty cycle, 1090 mhz stage 1, 50 vdc, i dq1 =80ma stage 2, 50 vdc, i dq2 = 150 ma z jc 1.1 0.15 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) class 2, passes 2500 v machine model (per eia/jesd22--a115) class a, passes 150 v charge device model (per jesd22--c101) class ii, passes 200 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987, quiescent current control for the rf integrated circuit device family .goto http://www.nxp.com/rf and search for an1977 or an1987. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.nxp.com/rf/calculators . 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955.
mmrf2010n MMRF2010GN 3 rf device data nxp semiconductors table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =55vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 -- on characteristics gate threshold voltage (v ds =10vdc,i d =52 adc) v gs(th) 1.3 1.8 2.3 vdc fixture gate quiescent voltage (v dd =50vdc,i dq1 = 80 madc, measured in functional test) v gg(q) 6.0 7.0 8.0 vdc stage 2 -- off characteristics zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =55vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 -- on characteristics gate threshold voltage (v ds =10vdc,i d = 528 adc) v gs(th) 1.3 1.8 2.3 vdc fixture gate quiescent voltage (v dd =50vdc,i dq2 = 150 madc, measured in functional test) v gg(q) 2.2 2.7 3.2 vdc drain--source on--voltage (v gs =10vdc,i d =1.6adc) v ds(on) ? 0.25 ? vdc functional tests (1,2) (in nxp test fixture, 50 ohm system) v dd =50vdc,i dq1 =80ma,i dq2 = 150 ma, p out = 250 w peak (25 w avg.), f = 1090 mhz, 128 sec pulse width, 10% duty cycle power gain g ps 30.5 32.1 34.0 db 2nd stage drain efficiency d 57.0 61.4 ? % load mismatch/ruggedness (in nxp test fixture, 50 ohm system) i dq1 =80ma,i dq2 = 150 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 1090 pulse (128 sec, 10% duty cycle) > 10:1 at all phase angles 0.345 w peak (3 db overdrive) 50 no device degradation table 6. ordering information device tape and reel information package mmrf2010nr1 r1 suffix = 500 units, 44 mm tape width, 13--inch reel to--270wb--14 MMRF2010GNr1 to--270wbg--14 1. part internally input matched. 2. measurements made with device in straight lead configuration before any lead forming operation is applied. lead forming is used for gull wing (gn) parts.
4 rf device data nxp semiconductors mmrf2010n MMRF2010GN typical characteristics figure 3. normalized i dq versus case temperature normalized i dq t c , case temperature ( c) 1.20 1.15 1.05 1.10 1.00 0.95 0.90 0.85 0.80 100 ?75 ?50 0 50 75 ?0.000 slope (ma/ c) +0.143 i dq1 i dq2 i dq2 i dq1 ?25 25 v dd =50vdc i dq1 =80ma i dq2 = 150 ma 250 10 9 90 t j , junction temperature ( c) 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 10 8 i d =6.52amps 8.30 amps 9.36 amps v dd =50vdc pulse width = 128 sec 10% duty cycle figure 4. mttf versus junction temperature -- pulse note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http://www.nxp.com/rf/calculators . note: performance measured in reference circuit.
mmrf2010n MMRF2010GN 5 rf device data nxp semiconductors 1030?1090 mhz reference circuit ?1.97 x2.76 (5.0 cm x 7.0 cm) table 7. 1030?1090 mhz performance (in nxp reference circuit, 50 ohm system) v dd =52vdc,i dq1 =80ma,i dq2 = 150 ma frequency (mhz) signal type g ps (db) 2nd stage eff. (%) p out (w) 1030 pulse (128 sec, 10% duty cycle) 34.1 61.0 250 peak 1090 33.4 61.9 1030 pulse (2 msec, 20% duty cycle) 33.6 61.5 250 peak 1090 32.6 62.9
6 rf device data nxp semiconductors mmrf2010n MMRF2010GN 1030?1090 mhz reference circuit ?1.97 x2.76 (5.0 cm x 7.0 cm) figure 5. mmrf2010n reference cir cuit component l ayout ? 1030?1090 mhz * stacked components note: component numbers c2, c3, c4, and c5 are not used. c23 r1 r2 c26 c24 c19 c18 c20 c17 c11 c13* c14* c15* c16* c12 c21 c6 c8 c9 c7 c22 v dd2 v dd1 q1 rev. b c1 c26 c25 c10 table 8. mmrf2010n reference circuit co mponent designations and values ? 1030?1090 mhz part description part number manufacturer c1, c10 56 pf chip capacitors atc600f560jt250xt atc c11, c12, c17, c18, c19 51 pf chip capacitors atc600f510jt250xt atc c6, c7 10 pf chip capacitors atc600f100jt250xt atc c8 6.8 pf chip capacitor atc600f6r8bt250xt atc c9 2.4 pf chip capacitor atc600f2r4bt250xt atc c13, c14, c15, c16, c25, c26 10 f chip capacitors c5750x7s2a106m tdk c20 1 f chip capacitor grm21br71h105ka12l murata c21, c22 8.2 pf chip capacitors atc600f8r2bt250xt atc c23 2.7 pf chip capacitor atc600f2r7bt250xt atc c24 1.5 pf chip capacitor atc600f1r5bt250xt atc q1 rf power ldmos transistor mmrf2010n nxp r1 3.9 k ?, 1/16 w chip resistor rr0816p-392-b-t5 susumu r2 1k ?, 1/16 w chip resistor rr0816p-102-b-t5 susumu pcb taconic rf60a 0.025 , r =6.15 ? mtl
mmrf2010n MMRF2010GN 7 rf device data nxp semiconductors typical characteris tics ? 1030?1090 mhz 400 36 80 p out , output power (watts) peak figure 6. power gain and drain efficiency versus output power and frequency 200 0 d , drain efficiency (%) g ps d g ps , power gain (db) 50 100 150 250 300 350 1090 mhz figure 7. power gain and drain efficiency versus output power and frequency ? long pulse 1030 mhz 0 p in, input power (watts) peak figure 8. output power versus input power and frequency 0 p out , output power (watts) peak 250 150 100 50 350 300 p in , input power (watts) peak figure 9. output power versus input power and frequency ? long pulse 35 34 33 32 31 30 29 28 70 60 50 40 30 20 10 0 1030 mhz v dd =52v,i dq1 =80ma,i dq2 = 150 ma pulse width = 128 sec, duty cycle = 10% 1090 mhz 1030 mhz 400 36 80 p out , output power (watts) peak 200 0 d , drain efficiency (%) g ps d g ps , power gain (db) 50 100 150 250 300 350 1090 mhz 35 34 33 32 31 30 29 28 70 60 50 40 30 20 10 0 1030 mhz 1090 mhz 1030 mhz v dd =52v,i dq1 =80ma,i dq2 = 150 ma pulse width = 2 msec, duty cycle = 20% 200 0.05 0.1 0.15 0.2 0.25 0.3 v dd =52v,i dq1 =80ma,i dq2 = 150 ma pulse width = 128 sec, duty cycle = 10% 0 0.05 0.1 0.15 0.2 0.25 0.3 0 p out , output power (watts) peak 250 150 100 50 350 300 200 v dd =52v,i dq1 =80ma,i dq2 = 150 ma pulse width = 2 msec, duty cycle = 20% 1090 mhz 1030 mhz 1090 mhz
8 rf device data nxp semiconductors mmrf2010n MMRF2010GN 1030?1090 mhz reference circuit f = 1030 mhz f = 1090 mhz f = 1030 mhz f = 1090 mhz z o =50 ? z source z load f mhz z source ? z load ? 1030 27.4 + j23.65 1.57 + j1.07 1090 32.5 + j29 1.35 + j1.5 z source = test circuit input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 10. series equivalent source and load impedance ? 1030 ? 1090 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
mmrf2010n MMRF2010GN 9 rf device data nxp semiconductors 1090 mhz reference circuit ?1.97 x2.76 (5.0 cm x 7.0 cm) figure 11. mmrf2010n reference cir cuit component layout ? 1090 mhz * stacked components note: component numbers c2, c3, c4, and c5 are not used. c23 r1 r2 c26 c24 c19 c18 c20 c25 c17 c11 c13* c14* c15* c16* c12 c21 c6 c8 c9 c7 c22 v dd2 v dd1 q1 rev. b c10 c1 table 9. mmrf2010n reference circuit co mponent designations and values ? 1090 mhz part description part number manufacturer c1, c10 56 pf chip capacitors atc600f560jt250xt atc c11, c12, c17, c18, c19 51 pf chip capacitors atc600f510jt250xt atc c6, c7 10 pf chip capacitors atc600f100jt250xt atc c8 6.8 pf chip capacitor atc600f6r8bt250xt atc c9 2.4 pf chip capacitor atc600f2r4bt250xt atc c13, c14, c15, c16, c25, c26 10 f chip capacitors c5750x7s2a106m tdk c20 1 f chip capacitor grm21br71h105ka12l murata c21, c22 8.2 pf chip capacitors atc600f8r2bt250xt atc c23 2.7 pf chip capacitor atc600f2r7bt250xt atc c24 1.5 pf chip capacitor atc600f1r5bt250xt atc q1 rf power ldmos transistor mmrf2010n nxp r1 3.9 k ?, 1/16 w chip resistor rr0816p-392-b-t5 susumu r2 1k ?, 1/16 w chip resistor rr0816p-102-b-t5 susumu pcb taconic rf60a 0.025 , r =6.15 ? mtl
10 rf device data nxp semiconductors mmrf2010n MMRF2010GN typical characteristics ? 1090 mhz reference circuit 0.15 p in , input power (watts) peak figure 12. power gain, drain efficiency and output power versus input power 32 31 30 0 90 70 50 10 150 100 d , drain efficiency (%) g ps , power gain (db) 29 28 27 26 25 24 0.2 0.25 0.3 0.35 30 50 p out ,output power (watts) peak p out 0.1 0.05 g ps 200 250 300 33 34 35 0.0 p in , input power (watts) peak p out , output power (watts) peak 250 150 300 200 0.1 0.15 50 0 100 0.05 0.0 0.2 0.25 0.3 0.35 0.4 figure 13. output power versus input power d v dd = 50 vdc, f = 1090 mhz i dq1 =80ma,i dq2 = 150 ma pulse width = 128 sec duty cycle = 10% v dd = 50 vdc, f = 1090 mhz i dq1 =80ma,i dq2 = 150 ma pulse width =128 sec duty cycle = 10% f mhz z source ? z load ? 1090 36.7 ? j29 1.3 + j0.60 z source = test circuit input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. series equivalent source and load impedance ? 1090 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
mmrf2010n MMRF2010GN 11 rf device data nxp semiconductors 1090 mhz narrowband production test fixture table 10. 1090 mhz narrowband performance (1,2) (in nxp test fixture, 50 ohm system) v dd =50vdc,i dq1 =80ma, i dq2 = 150 ma, p out = 250 w peak (25 w avg.), f = 1090 mhz, 128 sec pulse width, 10% duty cycle characteristic symbol min typ max unit power gain g ps 30.5 32.1 34.0 db 2nd stage drain efficiency d 57.0 61.4 ? % 1. part internally input matched. 2. measurements made with device in straight lead configuration before any lead forming operation is applied. lead forming is used for gull wing (gn) parts.
12 rf device data nxp semiconductors mmrf2010n MMRF2010GN 1090 mhz narrowband production test fixture ?4 x5 (10.2 cm x 12.7 cm) figure 15. mmrf2010n narrowband test ci rcuit component layout ? 1090 mhz rev. 0 c7 c20 r1 c6 c5 r2 c4 c1 c2 c3 r3 r4 r5 r6 c21 r7 d1 c22 c23 c24 u1 c17 c13 c12 c11 c9 c8 c10 c19 c14 c15 c16 c18 v dd1 v dd2 v gg2 v gg1 v dd2 v 3 p det cut out area thermal sense table 11. mmrf2010n narrowband test circuit c omponent designations and values ? 1090 mhz part description part number manufacturer c1 47 pf chip capacitor atc600f470jt250xt atc c2 2.7 pf chip capacitor atc100b2r7ct500xt atc c3 2.0 pf chip capacitor atc100b2r0bw500xt atc c4 1 f chip capacitor grm31mr71h105ka88l murata c5,c6,c7,c11,c14 43 pf chip capacitors atc100b430jt500xt atc c8, c9 10 pf chip capacitors atc100b100jt500xt atc c10 4.7 pf chip capacitor atc100b4r7ct500xt atc c12, c13, c15, c16, c20 10 f chip capacitors c5750x752a106m230kb tdk c17, c18 220 f, 100 v electrolytic capacitors mcgpr100v227m16x26-rh multicomp c19 30 pf chip capacitor atc600f300jt250xt atc c21 10 nf chip capacitor c0805c103j5rac-tu kemet c22 0.1 f chip capacitor c1206c104k1rac-tu kemet c23 47 pf chip capacitor atc800b470jt500xt atc c24 1000 pf chip capacitor c2012x7r2e102k085aa tdk d1 diode schottky rf sgl 70 v sot-23 hsms--2800--tr1g avago technologies r1 2.2 k ? , 1/8 w chip resistor crcw08052k20jnea vishay r2 0 ? , 1 a chip resistor cwcr08050000z0ea vishay r3 1k ? , 1/10 w chip resistor rr1220p-102-d susumu r4 50 ? , 10 w chip resistor 060120a25x50--2 anaren r5 15 k ? , 1/10 w chip resistor rr1220p-153-d susumu r6 51 ? , 1/8 w chip resistor rk73b2attd510j koa speer r7 470 k ? , 1/4 w chip resistor crcw1206470kfkea vishay u1 ic detector rf pwr 3ghz sc70--6 lt5534esc6#trmpbf linear technology pcb rogers, ro4350b, 0.020 , r =3.66 ? mtl
mmrf2010n MMRF2010GN 13 rf device data nxp semiconductors typical characteristics ? 1090 mhz narrowband production test fixture p in , input power (dbm) peak 51 49 47 30 52 50 45 p out , output power (dbm) peak 48 53 28 26 24 18 22 20 54 56 55 14 1090 265 284 f (mhz) p1db (w) p3db (w) figure 16. output power versus input power v dd =50vdc,i dq1 =80ma,i dq2 = 150 ma f = 1090 mhz, pulse width = 128 sec, 10% duty cycle 16 46 31 29 p out , output power (watts) peak figure 17. power gain and drain efficiency versus output power and quiescent current g ps , power gain (db) d drain efficiency (%) 30 28 32 10 100 500 10 60 50 40 30 20 33 70 34 d g ps v dd =50vdc,i dq1 =80ma,i dq2 = 150 ma f = 1090 mhz, pulse width = 128 sec, 10% duty cycle 33 31 29 32 30 28 34 10 100 500 10 80 70 60 50 40 30 20 35 90 p out , output power (watts) peak figure 18. power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) 25 _ c t c = ?55 _ c 85 _ c 85 _ c 25 _ c ?55 _ c g ps 27 d v dd =50vdc,i dq1 =80ma,i dq2 = 150 ma f = 1090 mhz, pulse width = 128 sec 10% duty cycle 0 p out , output power (watts) peak figure 19. power gain versus output power and drain--source voltage 32 31 g ps , power gain (db) 28 27 26 150 200 250 300 30 29 v dd =30v 50 100 25 35 v 33 350 40 v 45 v 50 v i dq1 =80ma,i dq2 = 150 ma f = 1090 mhz, pulse width = 128 sec 10% duty cycle
14 rf device data nxp semiconductors mmrf2010n MMRF2010GN 1090 mhz narrowband production test fixture f mhz z source ? z load ? 1090 13.6 ? j24.4 1.3 + j0.4 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 20. narrowband series equivalent source and load impedance ? 1090 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
mmrf2010n MMRF2010GN 15 rf device data nxp semiconductors figure 21. pcb pad layout for to--270wb--14 2x solder pads (14.99) 0.590 (9.45) 0.372 (1) (18.36) 0.723 (1) (0.51) 0.020 (1.02) 0.040 (8.94) 0.352 (1) 12x solder pads 1. slot dimensions are minimum dimensions and exclude milling tolerances. (mm) inches (5.61) 0.221 (4.57) 0.180 solder pad with thermal via structure. (7.87) 0.310 (0.51) 0.020 (1.02) 0.040 (8.92) 0.351 (11.76) 0.463 (5.61) 0.221 (4.57) 0.180 (18.29) 0.720 figure 22. pcb pad layout for to--270wbg--14
16 rf device data nxp semiconductors mmrf2010n MMRF2010GN package dimensions
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22 rf device data nxp semiconductors mmrf2010n MMRF2010GN product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 oct. 2015 ? initial release of data sheet 1 apr. 2017 ? typical wideband performance table: added 2 msec, 20% duty cycle operating conditions and data, p. 1 ? table 1, maximum ratings: over--temperature range extended to cover case operation from ?55 cto +150 c and operating junction range from ?55 c to +225 c from the previous lower limit of ?40 c to allow for a cold start after temperature soak at the minimum case operating temperature, p. 2 ? figure 3, normalized i dq versus case temperature: updated to refl ect performance measured in reference circuit, p. 4 ? table 7, 1030?1090 mhz performance table: added 2 msec, 20% duty cycle operating conditions and data, p. 5 ? 1030?1090 mhz reference circuit: added performance data and graphs, reference circuit component layout and component designations, pp. 5?8 ? figure 5, 1030?1090 mhz series equivalent sour ce and load impedances: impedance data updated to reflect 1030?1090 mhz reference circuit addition to data sheet, p . 8 (renumbered as figure 10 after new figures 5--9 added) ? figure 6, 1090 mhz mmrf2010n reference circuit component layout: layout updated to reflect actual circuit, p. 9 (renumbered as fi gure 11 after new figures 5--9 added) ? table 8, 1090 mhz reference circuit component desi gnations and values: r1 and r2 chip resistors replaced to support changes made to the i dq compensation circuit to extend the over--temperature range to cover ?55 cto+85 c from the previous lower limit of ?40 c, p. 9 (renumbered as table 9 after new table 8 added) ? figure 18, power gain and drain eff iciency versus output power: t c = ?40 c changed ?55 c to show current t c operation of fixture, p. 13
mmrf2010n MMRF2010GN 23 rf device data nxp semiconductors how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does nxp assume any liability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential o r incidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo, freescale, and the freescale logo are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2015, 2017 nxp b.v. document number: mmrf2010n rev. 1, 04/2017

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